職 稱: 副教授
電 話: 0592-5952797
郵 箱: qijin.cheng@xmu.edu.cn
研究方向: 低維納米材料和納米器件
個人履歷
--------------------------------------------------------------------------------
程其進博士,廈門大學副教授。曾經在新加坡南洋理工大學、澳大利亞悉尼大學、澳大利亞聯邦科學與工業研究組織從事低維半導體納米材料及納米器件的研究工作?,F已在權威國際期刊上發表SCI論文四十多篇,包括Journal of Materials Chemistry, Applied Physics Letters, Acta Materialia等;被引用400多次,H影響因子是13;并已在Journal of Materials Chemistry和Nanoscale上發表了兩張封面圖片;被國外十多家學術刊物邀請為特約審稿人。
2013-至今 廈門大學能源研究院副教授
2009-2012 澳大利亞聯邦科學與研究組織材料科學與工程所,博士后
2008-2009 澳大利亞悉尼大學,博士后
2005-2008 新加坡南洋理工大學,博士
研發方向
--------------------------------------------------------------------------------
1.低溫等離子體的開發和診斷;
2.低維半導體納米材料的制備和表征;
3.低維半導體納米材料的成核和生長;
4.低維半導體納米器件(包括太陽能電池、氣體傳感器、場發射器件等)。
榮譽及獎勵
--------------------------------------------------------------------------------
2013年入選“福建省高等學校新世紀優秀人才支持計劃”
出版物代表作
--------------------------------------------------------------------------------
1. Q. J. Cheng and K. Ostrikov, Property-performance control of multidimensional hierarchical single-crystalline ZnO nanoarchitectures, ChemPhysChem 13, 1535 (2012).
2. Q. J. Cheng and K. Ostrikov, Temperature-dependent growth mechanisms of low-dimensional ZnO nanostructures, CrystEngComm 13, 3455 (2011) .
3. Q. J. Cheng, S. Xu, and K. Ostrikov, Controlled-bandgap silicon nitride nanomaterials: deterministic nitrogenation in high-density plasmas, J. Mater. Chem. 20, 5853 (2010)。
4. Q. J. Cheng, E. Tam, S. Xu, and K. Ostrikov, Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation, Nanoscale 2, 594 (2010)..
5. Q. J. Cheng, S. Xu, and K. Ostrikov, Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas, Acta Mater. 58, 560 (2010) .
6. Q. J. Cheng, S. Xu, S. Y. Huang, and K. Ostrikov, Effective control of nanostructured phases in rapid, room-temperature synthesis of nanocrystalline Si in high-density plasmas, Cryst. Growth Des. 9, 2863 (2009).
7. Q. J. Cheng, S. Xu, and K. Ostrikov, Rapid, low-temperature synthesis of nc-Si in high-density, non-equilibrium plasmas: enabling nanocrystallinity at very low hydrogen dilution, J. Mater. Chem. 19, 5134 (2009).
8. Q. J. Cheng, S. Xu, and K. Ostrikov, Structural evolution of nanocrystalline silicon thin films synthesized in high-density, low-temperature reactive plasmas, Nanotechnology 20, 215606 (2009).
9. Q. J. Cheng, S. Xu, J. D. Long, and K. Ostrikov, Deterministic plasma-aided synthesis of high-quality nanoislanded nc-SiC films, Appl. Phys .Lett. 90, 173112 (2007).
10. Q. J. Cheng, S. Xu, J. D. Long, S. Y. Huang, and J. Guo, Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition, Nanotechnology 18, 465601 (2007).